Physical characterization of ultrathin silicon oxynitrides grown by Rapid Thermal Processing aiming to MOS tunnel devices
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/76/i=1/a=012002/pdf
Reference11 articles.
1. Tunnel oxides grown by rapid thermal oxidation
2. The Changing Effect of N[sub 2]/O[sub 2] Gas Flow Rate Ratios on Ultrathin Nitrogen-Enriched Oxynitride Gate Dielectrics
3. The effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structure
4. Atomic state and characterization of nitrogen at the SiC/SiO2 interface
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