Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching-Reference-Cited by-同舟云学术

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Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching

Published:1980-03 Issue:3 Volume:19 Page:491-494
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Moriwaki Kazuyuki,Masuda Noboru,Aritome Hiroaki,Namba Susumu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/19/i=3/a=491/pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced Materials Design by Lithography Technique;Progress in Advanced Structural and Functional Materials Design;2012-11-02

2. Ion implantation of silicon at the nanometer scale;Journal of Applied Physics;2007-10

3. Depth control of a silicon structure fabricated by 100qkeV Ar ion beam lithography;Applied Surface Science;2007-01

4. Three-Dimensional Nanofabrication Utilizing Selective Etching of Silicon Induced by Focused Ion Beam Irradiation;JSME International Journal Series C;2006

5. Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication;Japanese Journal of Applied Physics;2003-06-30

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