High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology-Reference-Cited by-同舟云学术

High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology

Published:2008-04-25 Issue:4 Volume:47 Page:2877-2879
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Hyungtae,Yeon Seongjin,Seo Kwangseok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. High-speed and low-power operation of a resonant tunneling logic gate MOBILE

2. High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs

3. 80 Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

4. High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology

5. A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)

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