80 Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990944?crawler=true&mimetype=application/pdf
Reference10 articles.
1. A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs
2. A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's
3. Ultra-fast optoelectronic circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode
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4. High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology;Japanese Journal of Applied Physics;2008-04-25
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