High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference5 articles.
1. High-speed and low-power operation of a resonant tunneling logic gate MOBILE
2. A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
3. Resonant Tunneling Diode/HBT D-Flip Flop ICs Using Current Mode Logic-Type Monostable-Bistable Transition Logic Element with Complementary Outputs
4. A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition
5. InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Efficient Solution of the Wigner–Poisson Equations for Modeling Resonant Tunneling Diodes;IEEE Transactions on Nanotechnology;2010-11
2. Monostable-to-Bistable Transition Logic Element-Based Literal Gates Using Resonant Tunneling Diodes;Japanese Journal of Applied Physics;2008-05-16
3. High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology;Japanese Journal of Applied Physics;2008-04-25
4. Noninverted/Inverted Monostabel-to-Bistable Transition Logic Element Circuits Using Three Resonant Tunneling Diodes and Their Application to a Static Binary Frequency Divider;Japanese Journal of Applied Physics;2008-04-25
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