InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits-Reference-Cited by-同舟云学术

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InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits

Published:2001 Issue:9 Volume:36 Page:1321-1327
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Andre P.,Blayac S.,Berdaguer P.,Benchimol J.-L.,Godin J.,Kaffmann N.,Konczykowska A.,Kasbari A.-E.,Riet M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/20432/00944658.pdf?arnumber=944658

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 40 ns pulsed I/V setup and measurement method applied to InP HBT characterisation;Electronics Letters;2009

2. High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology;Japanese Journal of Applied Physics;2008-04-25

3. Improved Design and Characterization Method for Very High Speed Bipolar Circuits;2008 Global Symposium on Millimeter Waves;2008-04

4. Application of Microwave and Millimeter-Wave Circuit Technologies to InGaP-HBT ICs for 40-Gbps Optical Transmission Systems;IEICE Transactions on Electronics;2007-09-01

5. High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology;Japanese Journal of Applied Physics;2007-04-24

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