Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma-Reference-Cited by-同舟云学术

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Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma

Published:2008-08-22 Issue:8 Volume:47 Page:6917-6922
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Hyun Woo,Kim Mansu,Min Nam-Ki,Efremov Alexander,Lee Chi-Woo,Kwon Kwang-Ho

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference33 articles.

1. High-density plasma etching of compound semiconductors

2. Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries

3. Selective dry etching using inductively coupled plasmas

4. Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors

5. The design of plasma etchants

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Computational characterization of capacitive coupled HBr /Cl ₂ / O ₂ plasma;Contributions to Plasma Physics;2022-07-03

2. Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas;Journal of Vacuum Science & Technology A;2021-07

3. Numerical investigation of the effect of variation of gas mixture ratio on density distribution of etchant species (Br, Br+, Cl, Cl+, and H) in HBr/Cl2/Ar plasma discharge;The European Physical Journal D;2020-06

4. Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma;Plasma Chemistry and Plasma Processing;2018-11-10

5. Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios;Thin Solid Films;2018-08

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