Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas-Reference-Cited by-同舟云学术

Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

Published:2021-07 Issue:4 Volume:39 Page:043002
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Mori Masahito¹,Irie Shoki²,Osano Yugo²,Eriguchi Koji²^ORCID,Ono Kouichi²

Affiliation:

1. Hitachi High-Tech Corporation, 794, Higashitoyoi, Kudamatsu City, Yamaguchi 744-0002, Japan

2. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540, Japan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0000970

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