Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference7 articles.
1. Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films
2. Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
3. Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
4. laser ablation of carbon films used for transfer of electronic device
5. Deposition and tribological behaviour of sputtered carbon hard coatings
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1. Carbon Heating Tube Used for Rapid Heating System;IEEE Access;2019
2. Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation;Applied Physics Letters;2017-04-10
3. Photoinduced carrier annihilation in silicon pn junction;Japanese Journal of Applied Physics;2015-07-13
4. Annihilation of photo induced minority carrier caused by ion implantation and rapid thermal annealing;Japanese Journal of Applied Physics;2014-04-30
5. Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source;Japanese Journal of Applied Physics;2014-04-22
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