Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing-Reference-Cited by-同舟云学术

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Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing

Published:2007-10-09 Issue:10A Volume:46 Page:6474-6479
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sameshima Toshiyuki,Maki Masato,Takiuchi Megumu,Andoh Nobuyuki,Sano Naoki,Matsuda Yasuhiro,Andoh Yasunori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference5 articles.

1. Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films

2. laser ablation of carbon films used for transfer of electronic device

3. Deposition and tribological behaviour of sputtered carbon hard coatings

4. Electrical Properties of Pulsed Laser Crystallized Silicon Films

5. Infrared reflectivity and transmissivity of boron-implanted, laser-annealed silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallization and activation of silicon by microwave rapid annealing;Applied Physics A;2016-06-24

2. Photoinduced carrier annihilation in silicon pn junction;Japanese Journal of Applied Physics;2015-07-13

3. Passivation of Silicon Surface by Laser Rapid Heating;Journal of Laser Micro/Nanoengineering;2014-06

4. Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source;Japanese Journal of Applied Physics;2014-04-22

5. Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating;Japanese Journal of Applied Physics;2012-03-21

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