laser ablation of carbon films used for transfer of electronic device

Abstract

ABSTRACTPulsed laser-induced ablation using diamond-like carbon (DLC) films is reported. Pulsed XeCl excimer laser induced heating revealed that 200-nm DLC films formed by sputtering method had high heat resistivity and structural relaxation was induced by laser heating. SiO2 layers formed on the DLC films were successively removed from the DLC surface by laser heating at 350 mJ/cm2. C-O bond reaction probably occurred and stickiness of SiO2 to carbon was reduced. Laser induced forward transfer of Al/SiO2 was also demonstrated using DLC films with laser heating.