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Defect-Free Planarization of 4H–SiC(0001) Substrate Using Reference Plate

  • Published:2008-01-18 Issue:1 Volume:47 Page:104-107
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Yagi Keita,Murata Junji,Kubota Akihisa,Sano Yasuhisa,Hara Hideyuki,Arima Kenta,Okamoto Takeshi,Mimura Hidekazu,Yamauchi Kazuto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical and physical mechanisms of CMP of gallium nitride;Advances in Chemical Mechanical Planarization (CMP);2022

2. Polishing of SiC films;Advances in Chemical Mechanical Planarization (CMP);2022

3. Understanding Corrosion Behavior of Magnesium Surface by x-Ray Irradiation for Improved Surface Design and Applications;JOM;2020-10-13

4. Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer;International Journal of Precision Engineering and Manufacturing;2018-11-26

5. Platinum-catalyzed hydrolysis etching of SiC in water: A density functional theory study;Japanese Journal of Applied Physics;2018-04-17
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