Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Mechanical Engineering
Link
http://link.springer.com/content/pdf/10.1007/s12541-018-0206-9.pdf
Reference26 articles.
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5. Jia, G., Li, B., and Zhang, J., “Influence of SiC Surface Defects on Materials Removal in Atmospheric Pressure Plasma Polishing,” Computational Materials Science, Vol. 146, pp. 26–35, 2018.
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