Influence of SiC surface defects on materials removal in atmospheric pressure plasma polishing-Reference-Cited by-同舟云学术

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Influence of SiC surface defects on materials removal in atmospheric pressure plasma polishing

Published:2018-04 Issue: Volume:146 Page:26-35
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Jia Guanglu,Li Bing,Zhang Jufan

Funder

National Natural Science Foundation of China

Science Foundation Ireland (SFI)

Joint Funds of National Natural Science Foundation of China

Shenzhen Research Funds

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference31 articles.

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2. Potential of epitaxial silicon carbide microbeam resonators for chemical sensing;Kermany;Phys. Status Solidi Appl. Mater. Sci.,2017

3. Herschel space observatory;Pilbratt;Astron. Astrophys.,2010

4. The research of EM wave absorbing properties of ferrite/silicon carbide/graphite three-layer composite coating knitted fabrics;Liu;J. Text. Inst.,2016

5. Wafer-scale graphene integrated circuit;Lin;Science (80-.),2011

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1. Surface micromorphology and nanostructures evolution in hybrid laser processes of slicing and polishing single crystal 4H-SiC;Journal of Materials Science & Technology;2024-06

2. ReaxFF molecular dynamics simulation of single-crystalline silicon plasma polishing and subsurface damage removal;Computational Materials Science;2024-01

3. Picosecond laser-induced evolution of processing properties of 4H–SiC;Optical Materials;2023-12

4. Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte;Ceramics International;2023-11

5. Defect-Engineered MnO₂ as Catalyst for the Chemical Mechanical Polishing of Silicon Carbide Wafer;ECS Journal of Solid State Science and Technology;2023-07-01

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