ReaxFF molecular dynamics simulation of single-crystalline silicon plasma polishing and subsurface damage removal-Reference-Cited by-同舟云学术

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ReaxFF molecular dynamics simulation of single-crystalline silicon plasma polishing and subsurface damage removal

Published:2024-01 Issue: Volume:233 Page:112685
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Sun Hao^ORCID,Hu Yang,Bai Long,Xu Jianfeng

Funder

China National Funds for Distinguished Young Scientists

Key Research and Development Project of Hainan Province

Department of Science and Technology of Hubei Province

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference35 articles.

1. Grinding of silicon wafers: a review from historical perspectives [J];Pei;Int. J. Mach. Tool Manu.,2008

2. Fine grinding of silicon wafers: designed experiments [J];Pei;Int. J. Mach. Tool Manu.,2002

3. Epitaxial growth of silicon on silicon wafers by direct laser melting [J];Le Dantec;Materials (basel),2020

4. The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC [J];Chen;RSC Adv.,2017

5. A comprehensive study of mechanical and chemo-mechanical polishing of CVD diamond;Roy;Mater. Today: Proc.,2018

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Insights into the atomic-scale removal mechanism of single crystal diamond in plasma-assisted polishing with quartz glass;Tribology International;2024-06

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