Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment-Reference-Cited by-同舟云学术

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Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment

Published:2008-01-18 Issue:1 Volume:47 Page:35-42
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiu Shao-Yen,Chen Hon-Rung,Chen Wei-Tien,Hsu Meng-Kai,Liu Wen-Chau,Tsai Jung-Hui,Lour Wen-Shiung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors

2. Use of WN<tex>$_ X$</tex>as the Diffusion Barrier for Interconnect Copper Metallization of InGaP–GaAs HBTs

3. Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors

4. Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

5. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments;Superlattices and Microstructures;2009-10

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