Use of WN<tex>$_ X$</tex>as the Diffusion Barrier for Interconnect Copper Metallization of InGaP

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Use of WN<tex>$_ X$</tex>as the Diffusion Barrier for Interconnect Copper Metallization of InGaP–GaAs HBTs

Published:2004-07 Issue:7 Volume:51 Page:1053-1059
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Chang S.-W.,Chang E.Y.,Lee C.-S.,Chen K.-S.,Tseng C.-W.,Hsieh T.-L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/29042/01308625.pdf?arnumber=1308625

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application;Applied Physics Express;2013-09-01

2. Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate;Applied Physics Express;2012-05-25

3. A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications;Japanese Journal of Applied Physics;2010-02-05

4. Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTs;Solid-State Electronics;2009-02

5. Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment;Japanese Journal of Applied Physics;2008-01-18

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