Experimental Verification of Direct Tunneling Assisted Electron Capture of Disordered-Induced Gap States in Metal-Insulator-Semiconductor Structures-Reference-Cited by-同舟云学术

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Experimental Verification of Direct Tunneling Assisted Electron Capture of Disordered-Induced Gap States in Metal-Insulator-Semiconductor Structures

Published:2002-11-01 Issue:Part 2, No. 11A Volume:41 Page:L1215-L1217
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Castán Helena,Dueñas Salvador,Barbolla Juan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=11A/a=L1215/pdf

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