Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon-Reference-Cited by-同舟云学术

Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

Published:2004-08 Issue:3 Volume:96 Page:1365-1372
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dueñas S.,Castán H.,García H.,Barbolla J.,Kukli K.,Aarik J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1767622

Reference33 articles.

1. Behavior of hydrogen in high dielectric constant oxide gate insulators

2. Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

3. M. Ritala and M. Leskelä, in Handbook of Thin Film Materials, Deposition and Processing of Thin Film Materials, Vol.1, edited by H. S. Nalwa (Academic, San Diego, 2002), p. 104.

4. Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

5. Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water

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