Behavior of hydrogen in high dielectric constant oxide gate insulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1609245
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
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3. Band offsets of wide-band-gap oxides and implications for future electronic devices
4. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility
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