Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment-Reference-Cited by-同舟云学术

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Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment

Published:2002-04-30 Issue:Part 1, No. 4B Volume:41 Page:2639-2644
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kodama Kazushi,Takahashi Mitsue,Ricinschi Dan,Ionut Lerescu Alexandru,Noda Minoru,Okuyama Masanori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4S/a=2639/pdf

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel;Chinese Physics Letters;2015-02

2. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor;Advances in Materials Science and Engineering;2013

3. Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors;MRS Proceedings;2011

4. Fabrication and characterization of a ferroelectric-gate FET With a ITO/PZT/SRO/Pt stacked structure;2010 International Conference on Microelectronics;2010-12

5. FABRICATION AND ELECTRICAL PROPERTIES OF Au/PVDF-TrFE/LaZrOx/Si(100) STRUCTURE;International Journal of Modern Physics B;2010-09-10

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