Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors

Author:

Phan Tue T.,Bui Trinh N. Q.,Miyasako Takaaki,Pham Thanh V.,Tokumitsu Eisuke,Shimoda Tatsuya

Abstract

ABSTRACTWe report on the use of La2O3 (LO) as a capping layer for ferroelectric-gate thin-film transistors (FGTs) with solution-processed indium-tin-oxide (ITO) channel and Pb(Zr,Ti)O3 (PZT) gate insulator. The fabricated FGT exhibited excellent performance with a high “ON/OFF” current ratio (ION/IOFF) and a large memory window (∆Vth) of about 108 and 3.5 V, respectively. Additionally, a significantly improved data retention time (more than 16 hours) as compared to the ITO/PZT structure was also obtained as a result of good interface properties between the ITO channel and LO/PZT stacked gate insulator. We suggest that the LO capping layer acts as a barrier to prevent the interdiffusion and provides atomically flat ITO/LO/PZT interface. This all-oxide FGT device is very promising for future ferroelectric memories.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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