Formation of an Atomically Flat Surface of ZnSe on GaAs (001) by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Formation of an Atomically Flat Surface of ZnSe on GaAs (001) by Metalorganic Vapor Phase Epitaxy

Published:1997-01-15 Issue:Part 2, No. 1A/B Volume:36 Page:L4-L7
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Funato Mitsuru,Aoki Satoshi,Fujita Shizuo,Fujita Shigeo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A strategy to eliminate selenium oxide islands formed on the ZnSe/GaAs epilayer;Materials Science in Semiconductor Processing;2024-05

2. Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes;Scientific Reports;2017-11-07

3. CdSe/ZnSSe quantum islands grown by MOVPE on homoepitaxial GaAs buffers;Journal of Crystal Growth;2000-06

4. Tunable band offsets via control of interface atomic configuration in GaAs-on-ZnSe(001) heterovalent heterostructures;Journal of Applied Physics;1999-02

5. X-ray reflectivity from ZnSe/GaAs heterostructures;Journal of Applied Physics;1999-02

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