Tunable band offsets via control of interface atomic configuration in GaAs-on-ZnSe(001) heterovalent heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369280
Reference21 articles.
1. Effect of interfacial bond type on the electronic and structural properties of GaSb/InAs superlattices
2. Tunable band offsets in ZnSe/GaAs heterovalent heterostructures grown by metalorganic vapor phase epitaxy
3. Local interface composition and band discontinuities in heterovalent heterostructures
4. Atomic and electronic structure of the GaAs/ZnSe(001) interface
5. Stability and band offsets of heterovalent superlattices: Si/GaP, Ge/GaAs, and Si/GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface studies of molecular beam epitaxy (MBE) grown ZnSe–GaAs heterovalent structures;Journal of Applied Physics;2020-06-28
2. ZnSe∕GaAs(001)heterostructures with defected interfaces: Structural, thermodynamic, and electronic properties;Physical Review B;2005-12-02
3. ZnO epilayers on GaN templates: Polarity control and valence-band offset;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures;Journal of Crystal Growth;2000-06
5. Energy states in ZnSe-GaAs heterovalent quantum structures;Physical Review B;1999-12-15
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