Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs-Reference-Cited by-同舟云学术

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Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs

Published:1997-09-15 Issue:Part 1, No. 9A Volume:36 Page:5543-5548
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fukasawa Ryoichi,Sakai Kiyomi,Perkowitz Sidney

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman scattering in InP doped by Be+-ion implantation;Semiconductors;2017-02

2. GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium;Journal of Applied Physics;2017-01-21

3. GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation;AIP Advances;2015-06

4. Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry;Applied Physics Letters;2009-07-20

5. Materials Characterization using THz Ellipsometry;MRS Proceedings;2009

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