Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3184567
Reference21 articles.
1. Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors
2. Terahertz imaging of silicon wafers
3. Carrier dynamics of electrons and holes in moderately doped silicon
4. Electrical characterization to 4 THz ofN‐ andP‐type GaAs using THz time‐domain spectroscopy
5. Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs
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2. Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3;Scientific Reports;2021-09-15
3. Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range;Journal of Infrared, Millimeter, and Terahertz Waves;2021-02-23
4. p–p Heterojunction Sensors of p-Cu3Mo2O9 Micro/Nanorods Vertically Grown on p-CuO Layers for Room-Temperature Ultrasensitive and Fast Recoverable Detection of NO2;ACS Applied Materials & Interfaces;2020-01-24
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