TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy

Published:1997-06-01 Issue:Part 2, No. 6A Volume:36 Page:L665-L667
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fushida Masahiro,Asahi Hajime,Yamamoto Kazuhiko,Koh Hideki,Asami Kumiko,Gonda Shun-ichi,Oe Kunishige

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi;Springer Handbook of Electronic and Photonic Materials;2017

2. Recent Advancement of Semiconductor Materials and Devices;Journal of the Society of Materials Science, Japan;2017

3. Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III–V compounds;Acta Crystallographica Section A Foundations of Crystallography;2012-03-06

4. Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2002-02-28

5. Gas source MBE growth of TlInGaAs/InP DH structures for the application to WDM optical fiber communication systems;Journal of Crystal Growth;2001-07

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