Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers-Reference-Cited by-同舟云学术

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Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers

Published:2006-10-06 Issue:10A Volume:45 Page:7592-7599
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tamura Masao,Ishimaru Manabu,Hinode Kenji,Tokiguchi Katsumi,Seki Hirohumi,Mori Hirotaro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion and aggregation process of oxygen embedded around an amorphous/crystal interface of Si(001) studied by molecular dynamics simulation;Journal of Applied Physics;2017-05-14

2. A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+implantation;Journal of Physics D: Applied Physics;2016-07-19

3. Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation;AIP Advances;2016-06

4. Electron diffraction study on chemical short-range order in covalent amorphous solids;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04

5. Gettering layer for oxygen accumulation in the initial stage of SIMOX processing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05

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