Electron diffraction study on chemical short-range order in covalent amorphous solids
Author:
Funder
Grant-in-Aid for Scientific Research (C)
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference74 articles.
1. For example, see S.M. Sze, Semiconductor Devices: Physics and Technology, second ed., John Wiley & Sons, Ins., 2002.
2. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
3. Microstructural evolution of oxygen implanted silicon during annealing processes
4. Effect of implantation energy and dose on low-dose SIMOX structures
5. Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers
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