Mismatches after Hot-Carrier Injection in Advanced Complementary Metal–Oxide–Semiconductor Technology Particularly for Analog Applications-Reference-Cited by-同舟云学术

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Mismatches after Hot-Carrier Injection in Advanced Complementary Metal–Oxide–Semiconductor Technology Particularly for Analog Applications

Published:2006-04-25 Issue:4B Volume:45 Page:3266-3271
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Shuang-Yuan,Lin Jung-Chun,Chen Hung-Wen,Lin Hung-Chuan,Jhou Ze-Wei,Chou Sam,Ko Joe,Lei Tien-Fu,Haung Heng-Sheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of high performance Y-123/Y-24Nb1/Ag single grain composites;Physica C: Superconductivity;2009-10

2. Transistor variability after CHC and NBTI stress in 90 nm pMOSFET technology;Electronics Letters;2009

3. Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology;Japanese Journal of Applied Physics;2008-03-14

4. Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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