Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology-Reference-Cited by-同舟云学术

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology

Published:2008-03-14 Issue:3 Volume:47 Page:1527-1531
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Shuang-Yuan,Tu Chia-Hao,Lin Jung-Chun,Wang Mu-Chun,Kao Po-Wei,Lin Memg-Hong,Wu Ssu-Han,Jhou Ze-Wei,Chou Sam,Ko Joe,Haung Heng-Sheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. CMOS reliability issues for emerging cryogenic Lunar electronics applications

2. Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K

3. A Drain Avalanche Hot Carrier Lifetime Model for n- and p-Channel MOSFETs

4. Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor

5. Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

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