Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment;Current Applied Physics;2015-03
4. Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-03
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