Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation-Reference-Cited by-同舟云学术

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Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation

Published:2006-07-07 Issue:7 Volume:45 Page:5662-5666
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Jenn-Fang,Hsiao Ru-Shang,Hsieh Pei-Chen,Chen Yu-Chih,Wang Jyh-Shyang,Chi Jim-Y

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures;Physica E: Low-dimensional Systems and Nanostructures;2010-11

2. Reliability assessment and degradation analysis of 1.3 μm GaInNAs lasers;Journal of Applied Physics;2009-11

3. Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys;Dilute III-V Nitride Semiconductors and Material Systems

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