Reliability assessment and degradation analysis of 1.3 μm GaInNAs lasers-Reference-Cited by-同舟云学术

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Reliability assessment and degradation analysis of 1.3 μm GaInNAs lasers

Published:2009-11 Issue:9 Volume:106 Page:093110
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lu W.,Bull S.,Lim J. J.,MacKenzie R.,Sujecki S.,Andrianov A. V.,Sadeghi M.,Wang S. M.,Larsson A.,Melanen P.,Sipilä P.,Uusimaa P.,Foxon C. T.,Larkins E. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3256156

Reference32 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m

3. Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

4. 1.32-μm GaInNAs-GaAs laser with a low threshold current density

5. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric-Field Control of Magnetic Order: From FeRh to Topological Antiferromagnetic Spintronics;Advanced Electronic Materials;2018-11-02

2. Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers;Journal of Applied Physics;2011-12-15

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