Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique-Reference-Cited by-同舟云学术

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Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique

Published:2006-11-10 Issue:No. 45 Volume:45 Page:L1193-L1196
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Kong-Soo,Yoo Dae-Han,Han Jae-Jong,Son Gil-Hwan,Lee Chang-Hun,Noh Ju-Hee,Kim Seok-Jae,Kim Yong-Kwon,You Young-Sub,Hyung Yong-Woo,Lee Hyeon-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of 72Ge/74Ge preamorphization combined with sub-keV boron implantation in pMOSFET fabrication;Solid-State Electronics;2011-02

2. Low-Temperature Solid Phase Epitaxial Regrowth of Silicon for Stacked Static Random Memory Application;Japanese Journal of Applied Physics;2011-01-20

3. Low-Temperature Solid Phase Epitaxial Regrowth of Silicon for Stacked Static Random Memory Application;Japanese Journal of Applied Physics;2011-01-01

4. Selective Epitaxial Growth of Silicon for Vertical Diode Application;Japanese Journal of Applied Physics;2010-08-20

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