Selective Epitaxial Growth of Silicon for Vertical Diode Application-Reference-Cited by-同舟云学术

Selective Epitaxial Growth of Silicon for Vertical Diode Application

Published:2010-08-20 Issue:8 Volume:49 Page:08JF03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Kong-Soo,Yoo Dae-Han,Han Jae-Jong,Hyung Yong-Woo,Kim Seok-Sik,Kang Chang-Jin,Jeong Hong-Sik,Moon Joo-Tae,Park Hyunho,Jeong Hanwook,Kim Kwang-Ryul,Choi Byoungdeog

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Scaled CMOS technology using SEG isolation and buried well process

2. Surface planarity and microstructure of low temperature silicon SEG and ELO

3. Low thermal budget selective epitaxial growth for formation of elevated source/drain MOS transistors

4. Electrical properties of pn junctions formed by plasma enhanced epitaxial growth

5. Si selective epitaxial growth using Cl2 pulsed molecular flow method

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