Intervalence-Band Absorption in Relation to Auger Recombination in Laser Materials
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe;Journal of Applied Physics;2016-05-28
3. Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism;Journal of Applied Physics;2015-07-07
4. Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers;Journal of Applied Physics;1997-02-15
5. Fundamentals of High-Power Operation;Monolithic Diode-Laser Arrays;1994
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