The variation of optical gain in Ge nanowires induced by the Δ E e Γ , L and symmetry of hole states under the axial stress-Reference-Cited by-同舟云学术

The variation of optical gain in Ge nanowires induced by the Δ E e Γ , L and symmetry of hole states under the axial stress

Published:2020-09-07 Issue:9 Volume:128 Page:094304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Xiong Wen¹^ORCID,Gong Le-Le¹,Chen Wen-Suo²^ORCID,Wang Zi-Wu³^ORCID

Affiliation:

1. Department of Physics, Chongqing University, Chongqing 401331, China

2. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China

3. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Applied Physics, School of Science, Tianjin University, Tianjin 300354, China

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0019959

Reference43 articles.

1. High performance, waveguide integrated Ge photodetectors

2. Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

3. Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

4. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

5. Direct-gap optical gain of Ge on Si at room temperature

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2. The optical gain variation of Ge nanowires induced by L-valley splitting under the [110] direction stress;Applied Physics Express;2024-01-01

3. The optical gain of dilute bismuth GaAs nanowires under the joint uniaxial stresses;Physics Letters A;2023-08

4. The optical gain of Ge nanowires engineered by the [100] direction uniaxial stress perpendicular to the nanowire axis;Physics Letters A;2021-09