Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215, USA
Funder
ARL MSME CRA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4951708
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