Diffusion of Point Defects in Silicon Crystals during Melt-Growth. II -One Diffusor Model-
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality;Journal of Crystal Growth;2022-08
2. Theoretical distributions of point-defect concentration in a Si ingot grown inside a melt using the noncontact crucible method considering the accumulation effect of diffusion flux;Journal of Crystal Growth;2020-10
3. Simulation to confirm the existence of distinct low-temperature regions in a Si melt using an insulating plate under the crucible bottom for the noncontact crucible method;Journal of Crystal Growth;2019-10
4. Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices;physica status solidi (a);2018-12-27
5. Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt;Journal of Crystal Growth;2016-01
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