Simulation to confirm the existence of distinct low-temperature regions in a Si melt using an insulating plate under the crucible bottom for the noncontact crucible method-Reference-Cited by-同舟云学术

Simulation to confirm the existence of distinct low-temperature regions in a Si melt using an insulating plate under the crucible bottom for the noncontact crucible method

Published:2019-10 Issue: Volume:524 Page:125160
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakajima Kazuo,Adachi Tomohiro,Itoh Harumasa,Yang Deren^ORCID

Funder

Ministry of Education, Culture, Sports, Science and Technology, Japan

Japan Science and Technology Agency, Japan

Pan Solution Technologies

Nagoya University, Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

2. Growth of high-quality multicrystalline Si ingots using noncontact crucible method

3. Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating

4. Growth of square Si single bulk crystals with large side-face widths using noncontact crucible method

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1. Importance of zero cross-point (Cp = 0) control between the vacancy and interstitial Si atom concentration curves to obtain a perfect Si ingot using Si melt growth;Journal of Crystal Growth;2024-10

2. Importance of Zero Cross-Point (Cp = 0) Control between the Vacancy and Interstitial Si Atom Concentration Curves to Obtain a Perfect Si Ingot Using Si Melt Growth;2024

3. Two-dimensional BMD, BSF, ring-OISF and COP distributions in a dislocation-free ingot grown by the NOC method;Journal of Crystal Growth;2023-03

4. Two-dimensional distribution of vacancy concentration at cross points for the ingot length and the temperature gradients to largely reduce point defects and the growth of a dislocation-free NOC ingot for evaluation of its quality;Journal of Crystal Growth;2022-08

5. Theoretical distributions of point-defect concentration in a Si ingot grown inside a melt using the noncontact crucible method considering the accumulation effect of diffusion flux;Journal of Crystal Growth;2020-10