Amorphous-Se/GaAs –A Novel Heterostructure for Solid-State Devices

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Amorphous-Se/GaAs –A Novel Heterostructure for Solid-State Devices–

Published:1991-12-30 Issue:Part 1, No. 12B Volume:30 Page:3763-3770
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takatani Shinichiro,Kikawa Takeshi,Nakazawa Masatoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Systematic theoretical studies of the Schottky barrier control by passivating atomic intralayers;Surface Science;1999-05

2. Interface formation between layered-compound GaS and GaAs(111)A surface;Surface Science;1998-10

3. Nearly ideal characteristics of GaAs metal–insulator–semiconductor diodes by atomic layer passivation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11

4. A structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure;MRS Proceedings;1993

5. Microcrystal growth of GaAs on a Se‐terminated GaAlAs surface for the quantum‐well box structure by sequential supplies of Ga and As molecular beams;Applied Physics Letters;1992-11-16

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