A structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

Abstract

ABSTRACTA selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAIAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga2Se3 and A12Se3 layer formation at the interface of GaAs/Se-terminated GaAIAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.