Nearly ideal characteristics of GaAs metal–insulator–semiconductor diodes by atomic layer passivation-Reference-Cited by-同舟云学术

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Nearly ideal characteristics of GaAs metal–insulator–semiconductor diodes by atomic layer passivation

Published:1994-11 Issue:6 Volume:12 Page:3084
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wada Yoshinori

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS;Journal of Electron Spectroscopy and Related Phenomena;2013-10

2. La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode;Solid-State Electronics;2013-04

3. Capacitance–Voltage Characterization of La$_{2}$O$_{3}$ Metal–Oxide–Semiconductor Structures on In$_{0.53}$Ga$_{0.47}$As Substrate with Different Surface Treatment Methods;Japanese Journal of Applied Physics;2011-10-20

4. Study of High-$\kappa$/In$_{0.53}$Ga$_{0.47}$As Interface by Hard X-ray Photoemission Spectroscopy;Japanese Journal of Applied Physics;2011-10-20

5. Effect of Various Surface Treatments on Chemical Bonding State at La2O3/In0.53Ga0.47As and on In0.53Ga0.47As Surface;ECS Transactions;2011-10-04

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