Study of High-$\kappa$/In$_{0.53}$Ga$_{0.47}$As Interface by Hard X-ray Photoemission Spectroscopy-Reference-Cited by-同舟云学术

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Study of High-$\kappa$/In$_{0.53}$Ga$_{0.47}$As Interface by Hard X-ray Photoemission Spectroscopy

Published:2011-10-20 Issue:10 Volume:50 Page:10PD02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamashita Koji,Numajiri Yuuya,Watanabe Masato,Kakushima Kuniyuki,Iwai Hiroshi,Nohira Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

2. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

3. Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

4. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

5. Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS;Journal of Electron Spectroscopy and Related Phenomena;2013-10

2. Capacitance–Voltage Characterization of La$_{2}$O$_{3}$ Metal–Oxide–Semiconductor Structures on In$_{0.53}$Ga$_{0.47}$As Substrate with Different Surface Treatment Methods;Japanese Journal of Applied Physics;2011-10-20

3. Capacitance–Voltage Characterization of La2O3Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods;Japanese Journal of Applied Physics;2011-10-01

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