Metalorganic Vapor Phase Epitaxy of CuGa(SxSe1-x)2Lattice-Matched to GaP (100)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of CuAlSe2(112)/GaAs(100) heteroepitaxial layers grown by hot wall epitaxy method;Journal of Crystal Growth;2006-04
2. Metalorganic vapor phase epitaxy of Cu(AlxGa1−x)(SySe1−y)2 chalcopyrite semiconductors and their band offsets;Journal of Physics and Chemistry of Solids;2003-09
3. Band gap energy bowing and residual strain in CuAl(SxSe1−x)2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;2002-05
4. Green to ultraviolet photoluminescence from CuAlxGa1−xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy;Journal of Crystal Growth;2001-08
5. Structural studies of Cu–III–VI2 chalcopyrite semiconductor heteroepitaxial films grown by low-pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;2001-05-15
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