Structural studies of Cu–III–VI2 chalcopyrite semiconductor heteroepitaxial films grown by low-pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1364643
Reference24 articles.
1. Epitaxial Growth of CuGaS2by Metalorganic Chemical Vapor Deposition
2. Epitaxial Growth of Wide-Gap Chalcopyrite Materials –Current State and Future–
3. Visible and Ultraviolet Photoluminescence from Cu–III–VI2Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
4. Excitonic photoluminescence in a CuAlSe2chalcopyrite semiconductor grown by low‐pressure metalorganic chemical‐vapor deposition
5. Photoluminescence studies in CuAlSe2epilayers grown by low‐pressure metalorganic chemical‐vapor deposition
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1. Excitonic luminescence of polycrystalline CuInS2 solar cell material under the influence of strain;Journal of Applied Physics;2007-08
2. The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS2 thin films;Thin Solid Films;2007-05
3. Optical Properties of Strained Polycrystalline CuInS2 Layers;MRS Proceedings;2007
4. Microstructure of epitaxial CuGaS2 on Si(111);Journal of Physics and Chemistry of Solids;2003-09
5. Metalorganic vapor phase epitaxy of Cu(AlxGa1−x)(SySe1−y)2 chalcopyrite semiconductors and their band offsets;Journal of Physics and Chemistry of Solids;2003-09
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