Green to ultraviolet photoluminescence from CuAlxGa1−xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Green to ultraviolet photoluminescence from CuAlxGa1−xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy

Published:2001-08 Issue:4 Volume:226 Page:473-480
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Harada Yoshiyuki,Nakanishi Hisayuki,Chichibu Shigefusa F

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. J.L. Shay, J.H. Wernick, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications, Pergamon, Oxford, 1975.

2. Epitaxial Growth of CuGaS2by Metalorganic Chemical Vapor Deposition

3. Metalorganic Vapor Phase Epitaxy of CuAlxGa1-x(SySe1-y)2

4. Low-Pressure Metalorganic Chemical Vapor Deposition of a $\bf CuGaSe_{2}/CuAlSe_{2}$ Heterostructure

5. Optically Pumped Stimulated Emission from $\bf CuGa(S_{0.65}Se_{0.35})_{2}/CuAl_{0.3}Ga_{0.7}(S_{0.65}Se_{0.35})_{2}$ Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si-co-doped CuAlS2 :Mn conductive phosphor thin films prepared by electron beam evaporation using phosphor powder pellets;physica status solidi (c);2015-05-26

2. Structural, Electronic, and Optical Features of CuAl(S1–xSex)2 Solar Cell Materials;Inorganic Chemistry;2014-02-11

3. Tailoring the electronic and elastic properties by varying the composition of the CuGa1−xAlxS2chalcopyrite semiconductor;Journal of Physics D: Applied Physics;2013-06-25

4. Temperature Dependent Crystal-Field Splitting and Band-Edge Characteristic in Cu(AlxIn1-x)S2 (0 ≤ x ≤ 1) Series Solar Energy Materials;Journal of The Electrochemical Society;2011

5. Photoluminescence and excitation spectra of Cu(AlxGa1−x)S2 films grown by vapor phase epitaxy;Journal of Luminescence;2010-08