Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-kHydrogen Silisesquioxane-Reference-Cited by-同舟云学术

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Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-kHydrogen Silisesquioxane

Published:2001-05-15 Issue:Part 1, No. 5A Volume:40 Page:3143-3146
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Ting-Chang,Liu Po-Tsun,Tsai Tsung-Ming,Yeh Fon-Shan,Tseng Tseung-Yuen,Tsai Ming-Shih,Chen Ben-Chang,Yang Ya-Liang,Sze Simon-M.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication for Cu/Hydrogen Silsesquioxane Damascene Structure by Nanoimprint;Journal of The Electrochemical Society;2010

2. Influence of acetic acid and ammonia catalyst on microstructure and properties of fluorinated polyimide–organosilicate hybrids;Thin Solid Films;2009-09

3. Preparation, microstructure, and property characterizations of fluorinated polyimide–organosilicate hybrids;European Polymer Journal;2008-11

4. The Influences of Moisture and Fluorine on the Characteristics of Fluorinated Silicate Glass for Copper Metallization;Journal of The Electrochemical Society;2006

5. CMP of Low-k Methylsilsesquiazane with Oxygen Plasma Treatment for Multilevel Interconnect Applications;Electrochemical and Solid-State Letters;2004

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