Fabrication for Cu/Hydrogen Silsesquioxane Damascene Structure by Nanoimprint-Reference-Cited by-同舟云学术

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Fabrication for Cu/Hydrogen Silsesquioxane Damascene Structure by Nanoimprint

Published:2010 Issue:4 Volume:157 Page:H443
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Hsu Chih-Chieh,Huang Fon-Shan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. http://www.itrs.net, last accessed May 2009.

2. Recovery Processes of CMP-Induced Damages for Copper/Porous Silica Damascene Interconnects

3. T. S. Kim, T. Konno, T. Yamanaka, and R. H. Dauskardt , inIEEE International Interconnect Technology Conference, IEEE, p. 171 (2008).

4. Influence of CMP Slurries and Post-CMP Cleaning Solutions on Cu Interconnects and TDDB Reliability

5. Structural Comparison of Hydrogen Silsesquioxane Based Porous Low-k Thin Films Prepared with Varying Process Conditions

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